S9016 transistor (npn) features power dissipation p cm: 0.3 w (tamb=25 ) collector current i cm: 0.025 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a, i e =0 30 v collector-emitter breakdown voltage v(br) ceo ic= o.1ma, i b =0 20 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a dc current gain h fe(1) v ce =5v, i c = 1ma 28 270 collector-emitter saturation voltage v ce (sat) i c = 10ma, i b = 1ma 0.3 v transition frequency f t v ce = 5v, i c = 1ma f = 100mhz 300 mhz classification of h fe(1) rank d e f g h i j range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 1 2 3 to-92 1. emitter 2. base 3. collector S9016 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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